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BPX-48 Datasheet(PDF) 3 Page - ams-OSRAM AG |
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BPX-48 Datasheet(HTML) 3 Page - ams-OSRAM AG |
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3 / 12 page ![]() BPX 48 3 Version 1.3 | 2018-05-30 Characteristics T A = 25 °C Parameter Symbol Values Max. deviation from average for each single diode ∆ S typ. 5 % Wavelength of max sensitivity λ S max typ. 900 nm Spectral range of sensitivity λ 10% typ. 400 ... 1150 nm Radiant sensitive area A typ. 1.54 mm² Dimensions of active chip area L x W typ. 0.7 x 2.2 mm x mm Half angle φ typ. 60 ° Dark current V R = 10 V I R typ. max. 10 nA 100 nA Spectral sensitivity of the chip λ = 850 nm S λ typ. 0.55 A / W Quantum yield of the chip λ = 850 nm η typ. 0.80 Electrons / Photon Open-circuit voltage E v = 1000 lx; Std. Light A V O min. typ. 280 mV 330 mV Short-circuit current E v = 1000 lx; Std. Light A I SC typ. 24 µA Rise time V R = 5 V; RL = 1 kΩ; λ = 850 nm t r typ. 0.5 µs Fall time V R = 5 V; RL = 1 kΩ; λ = 850 nm t f typ. 0.5 µs Forward voltage I F = 100 mA; E = 0 V F typ. 1.3 V Capacitance V R = 0 V; f = 1 MHz; E = 0 C 0 typ. 25 pF Temperature coefficient of voltage TC V typ. -2.6 mV / K Temperature coefficient of short-circuit current Std. Light A TC I typ. 0.18 % / K Noise equivalent power V R = 10 V; λ = 850 nm NEP typ. 0.103 pW / Hz1/2 Detection limit V R = 10 V; λ = 950 nm D* typ. 1.2e12 cm x Hz1/2 / W |
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