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RX72N Datasheet(PDF) 166 Page - Renesas Technology Corp |
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RX72N Datasheet(HTML) 166 Page - Renesas Technology Corp |
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166 / 179 page  R01DS0343EJ0120 Rev.1.20 Page 166 of 179 Nov 15, 2023 RX72N Group 2. Electrical Characteristics 2.12 Flash Memory Characteristics Note 1. Definition of reprogram/erase cycle: The program/erase cycle is the number of erasing for each block. When the number of program/erase cycles is n, each block can be erased n times. For instance, when 128-byte program is performed 64 times for different addresses in 8-Kbyte block and then the block is erased, the program/erase cycle is counted as one. However, the same address cannot be programmed more than once before the next erase cycle (overwriting is prohibited). Note 2. Characteristics are degraded as the number of program/erase increases. This is the minimum value of program/erase cycles to guarantee all characteristics listed in this table. Note 3. This shows the characteristics when a self-programming library provided by Renesas Electronics or a flash programmer is used and the program/erase cycle does not exceed the specified value. Note 4. This result is obtained from reliability testing. Table 2.61 Code Flash Memory Characteristics Conditions: VCC = AVCC0 = AVCC1 = VCC_USB = VBATT = 2.7 to 3.6 V, 2.7 V ≤ VREFH0 ≤ AVCC0, VSS = AVSS0 = AVSS1 = VREFL0 = VSS_USB = 0 V, Temperature range for programming/erasure: Ta = Topr Item Symbol FCLK = 4 MHz FCLK = 15 MHz 20 MHz ≤ FCLK ≤ 60 MHz Unit Conditions Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Programming time NPEC ≤ 100 times 128 bytes tP128 — 0.75 13.2 — 0.38 6.6 — 0.34 6 ms 8 Kbytes tP8K — 49 176 — 25 88 — 22 80 ms 32 Kbytes tP32K — 194 704 — 97 352 — 88 320 ms Programming time NPEC > 100 times 128 bytes tP128 — 0.91 15.8 — 0.46 8 — 0.41 7.2 ms 8 Kbytes tP8K — 60 212 —30 106 —27 96 ms 32 Kbytes tP32K — 234 848 — 117 424 — 106 384 ms Erasure time NPEC ≤ 100 times 8 Kbytes tE8K — 78 216 —48 132 —43 120 ms 32 Kbytes tE32K — 283 864 — 173 528 — 157 480 ms Erasure time NPEC > 100 times 8 Kbytes tE8K — 94 260 —58 158 —52 144 ms 32 Kbytes tE32K — 341 1040 — 208 632 — 189 576 ms Reprogramming/erasure cycle*1 NPEC 10000 *2 — — 10000 *2 — — 10000 *2 —— Times Suspend delay time during programming tSPD — — 264 — — 132 — — 120 µs First suspend delay time during erasing (in suspend priority mode) tSESD1 — — 216 — — 132 — — 120 µs Second suspend delay time during erasure (in suspend priority mode) tSESD2 —— 1.7 —— 1.7 —— 1.7 ms Suspend delay time during erasure (in erasure priority mode) tSEED —— 1.7 —— 1.7 —— 1.7 ms Forced stop command tFD —— 32 —— 22 —— 20 µs Data retention*3, *4 tDRP 20 — — 20 — — 20 — — Year Ta ≤ 85°C 10 — — 10 — — 10 — — Ta ≤ 105°C |
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