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RX72N Datasheet(PDF) 167 Page - Renesas Technology Corp |
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RX72N Datasheet(HTML) 167 Page - Renesas Technology Corp |
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167 / 179 page  R01DS0343EJ0120 Rev.1.20 Page 167 of 179 Nov 15, 2023 RX72N Group 2. Electrical Characteristics Note 1. Definition of reprogram/erase cycle: The program/erase cycle is the number of erasing for each block. When the number of program/erase cycles is n, each block can be erased n times. For instance, when 4-byte program is performed 512 times for different addresses in 2-Kbyte block and then the block is erased, the program/erase cycle is counted as one. However, the same address cannot be programmed more than once before the next erase cycle (overwriting is prohibited). Note 2. Characteristics are degraded as the number of program/erase increases. This is the minimum value of program/erase cycles to guarantee all characteristics listed in this table. Note 3. This shows the characteristics when a self-programming library provided by Renesas Electronics or a flash programmer is used and the program/erase cycle does not exceed the specified value. Note 4. This result is obtained from reliability testing. Table 2.62 Data Flash Memory Characteristics Conditions: VCC = AVCC0 = AVCC1 = VCC_USB = VBATT = 2.7 to 3.6 V, 2.7 V ≤ VREFH0 ≤ AVCC0, VSS = AVSS0 = AVSS1 = VREFL0 = VSS_USB = 0 V, Temperature range for programming/erasure: Ta = Topr Item Symbol FCLK = 4 MHz FCLK = 15 MHz 20 MHz ≤ FCLK ≤ 60 MHz Unit Conditions Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Programming time 4 bytes tDP4 — 0.36 3.8 — 0.18 1.9 — 0.16 1.7 ms Erasure time 64 bytes tDP64 — 3.1 18 — 1.9 11 — 1.7 10 ms 128 bytes tDP128 — 4.7 27 — 2.9 16 — 2.6 15 ms 256 bytes tDP256 — 8.9 50 — 5.4 31 — 4.9 28 ms Blank check time 4 bytes tDBC4 — — 84 — — 33 — — 30 µs 64 bytes tDBC64 — — 280 — — 110 — — 100 µs 2 Kbytes tDBC2K — — 6160 — — 2420 — — 2200 µs Reprogramming/erasure cycle*1 NDPEC 100000 *2 — — 100000 *2 — — 100000 *2 —— Times Suspend delay time during programming tDSPD — — 264 — — 132 — — 120 µs First suspend delay time during erasure (in suspend priority mode) 64 bytes — — — 216 — — 132 — — 120 µs 128 bytes — — — 216 — — 132 — — 120 µs 256 bytes — — — 216 — — 132 — — 120 µs Second suspend delay time during erasure (in suspend priority mode) 64 bytes — — — 300 — — 300 — — 300 µs 128 bytes — — — 390 — — 390 — — 390 µs 256 bytes — — — 570 — — 570 — — 570 µs Suspend delay time during erasing (in suspend priority mode) 64 bytes — — — 300 — — 300 — — 300 µs 128 bytes — — — 390 — — 390 — — 390 µs 256 bytes — — — 570 — — 570 — — 570 µs Forced stop command tFD — — 32 — — 22 — — 20 µs Data retention*3, *4 tDDRP 20 —— 20 —— 20 — — Year Ta ≤ 85°C 10 —— 10 —— 10 — — Ta ≤ 105°C |
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