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CSP30N75 Datasheet(PDF) 1 Page - CASS SEMICONDUCTOR CO., LTD

Part # CSP30N75
Description  N-Channel Trench Power MOSFET
PDF  6 Pages
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Manufacturer  CASS [CASS SEMICONDUCTOR CO., LTD]
Direct Link  http://www.casssemi.com
Logo CASS - CASS SEMICONDUCTOR CO., LTD

CSP30N75 Datasheet(HTML) 1 Page - CASS SEMICONDUCTOR CO., LTD

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CSP30N75
CASS SEMICONDUCTOR CO., LTD
http://www.casssemi.com
V2.0
- 1 -
N
-Channel Trench Power MOSFET
General Description
The CSP30N75 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 4.5V. This device is suitable for use as a
wide variety of applications.
Features
● VDS = 30V,ID =12A
RDS(ON) < 11 mΩ @ VGS =10V
RDS(ON) < 16 mΩ @ VGS =4.5V
● High density cell design for ultra low Rdson
● Lead free product is acquired
Application
●
Battery protection
● Load switch
● Power management
100% UIS TESTED!
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
CSP30N75
CSP30N75
SOP-8
Ø330mm
12mm
2500 units
Table 1.
Absolute Maximum Ratings (TA=25℃)
Symbol
Parameter
Value
Unit
VDS
Drain-Source Voltage (
VGS=0V)
30
V
VGS
Gate-Source Voltage (
VDS=0V)
±20
V
Drain Current-Continuous(Tc=25℃)
(Note 1)
12
A
ID
Drain Current-Continuous(Tc=100℃)
7.5
A
IDM (pluse)
Drain Current-Continuous@ Current-Pulsed
(Note 2)
48
A
PD
Maximum Power Dissipation
3.5
W
EAS
Avalanche energy
(Note 3)
144
mJ
TJ,TSTG
Operating Junction and Storage Temperature Range
-55 To 150
℃
Table 2.
Thermal Characteristic
Symbol
Parameter
Value
Unit
RJA
Thermal Resistance, Junction-to-Ambient
36
/W
℃
Schematic Diagram
Marking and pin Assignment
SOP-8
top view


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