CSP30N75

CASS SEMICONDUCTOR CO., LTD

http://www.casssemi.com

V2.0

- 2 -

Table 3.

Electrical Characteristics (TA=25℃unless otherwise noted)

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

On/Off States

BVDSS

Drain-Source Breakdown Voltage

VGS=0V ID=250μA

30

34

V

IDSS

Zero Gate Voltage Drain Current

VDS=30V,VGS=0V

1

μA

IGSS

Gate-Body Leakage Current

VGS=±20V,VDS=0V

±100

nA

VGS(th)

Gate Threshold Voltage

VDS=VGS,ID=250μA

1.0

1.5

2.5

V

gFS

Forward Transconductance

VDS=5V,ID=10A

15

S

VGS=10V, ID=12A

7.5

11

mΩ

RDS(ON)

Drain-Source On-State Resistance

VGS=4.5V, ID=5A

11

16

mΩ

Dynamic Characteristics

Ciss

Input Capacitance

1600

pF

Coss

Output Capacitance

280

pF

Crss

Reverse Transfer Capacitance

VDS=15V,VGS=0V,

f=1.0MHz

195

pF

Rg

Gate resistance

VGS=0V, VDS=0V,f=1.0MHz

2.3

Ω

Switching Times

td(on)

Turn-on Delay Time

9

nS

tr

Turn-on Rise Time

26

nS

td(off)

Turn-Off Delay Time

35

nS

tf

Turn-Off Fall Time

VGS=10V, VDS=15V,

RL=0.75,RGEN=3

8

nS

Qg

Total Gate Charge

35

nC

Qgs

Gate-Source Charge

6

nC

Qgd

Gate-Drain Charge

VGS=10V, VDS=25V, ID=12A

11

nC

Source-Drain Diode Characteristics

ISD

Source-Drain Current(Body Diode)

12

A

VSD

Forward on Voltage

VGS=0V,IS=10A

1.2

V

Notes 1.The maximum current rating is package limited.

Notes 2.Repetitive Rating: Pulse width limited by maximum junction temperature

Notes 3.EAS condition: TJ=25

,VDD=

℃

15V,VG=10V, RG=25Ω,