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November, 2023

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J176-7

Document Number: IF35089 Rev A01

J176-7

Electrical Characteristics

Static Characteristics (@ TA = 25°C, Unless otherwise specified)

Parameters

Conditions

J176

J177

Unit

Min

Max

Min

Max

V(BR)GSS

Gate to Source

Breakdown Voltage

VDS = 0V, IG = 1μA

30

30

V

IGSS

Gate to Source

Reverse Current

VGS = 20V, VDS = 0V

1

1

nA

VGS(OFF)

Gate to Source

Cutoff Voltage

VDS = -15V, ID = -10nA

1

4

0.8

2.25

V

IDSS

Drain to Source

Saturation Current

VGS = 0V, VDS = -15V

(Pulsed)

-2

-35

-1.5

-20

mA

ID(OFF)

Drain Cutoff Current

VDS = -15V, VGS = 10V

-1

-1

nA

Dynamic Characteristics (@ TA = 25°C, Unless otherwise specified)

Parameters

Conditions

J176

J177

Unit

Min

Max

Min

Max

RDS(ON)

Drain to Source

ON Resistance

VDS <= 0.1V, VGS = 0V, f = 1kHz

250

300

Ω

Cgd

Drain Gate

Capacitance

VDS = 0V, VGS = 10V, f = 1MHz

5.5 (typ)

5.5 (typ)

pF

Cgs

Input Capacitance

VDS = 0V, VGS = 10V, f = 1MHz

5.5 (typ)

5.5 (typ)

pF

Cgd + Cgs

Drain + Source Gate

Capacitance

VDS = VGS = 0V, f = 1MHz

32 (typ)

32 (typ)

pF

td(ON)

Turn ON Delay Time

VDD = -6V

J176: VGS(OFF) = 6V, RL = 5600 Ω

J177: VGS(OFF) = 3V, RL = 10000 Ω

15 (typ)

20 (typ)

ns

tr

Rise Time

20 (typ)

25 (typ)

ns

td(OFF)

Turn OFF Delay Time

15 (typ)

20 (typ)

ns

tf

Fall Time

20 (typ)

25 (typ)

ns

Maximum Ratings (@ T

A

= 25°C, Unless otherwise specified)

Parameters

SOT-23

TO-92

Unit

VRGS Reverse Gate Source and Gate Drain Voltage

-20

-20

V

IFG

Continuous Forward Gate Current

50

50

mA

PD

Continuous Device Power Dissipation¹

350

500

mW

P

Power Derating1

2.8

4

mW/°C

TJ

Operating Junction Temperature

-55 to 150

-55 to 150

°C

TSTG Storage Temperature

-55 to 150

-55 to 150

°C

1 Thermal power dissipation and derating values obtained with gate pin (substrate) thermally connected to pad and/or internal layer.