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STD1NK60 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part # STD1NK60
Description  isc N-Channel MOSFET Transistor
PDF  3 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

STD1NK60 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  STD1NK60 Datasheet HTML 1Page - Inchange Semiconductor Company Limited STD1NK60 Datasheet HTML 2Page - Inchange Semiconductor Company Limited STD1NK60 Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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isc N-Channel MOSFET Transistor
STD1NK60
www.iscsemi.com
2
ELECTRICAL CHARACTERISTICS（TC=25℃ unless otherwise specified）
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
V(BR)DSS
Drain-Source Breakdown Voltage
VGS= 0V; ID= 1mA
600
--
--
V
VGS(th)
Gate Threshold Voltage
VDS= VGS; ID= 1mA
2.25
--
3.7
V
RDS(on)
Drain-Source Saturation Voltage
VGS= 10V; ID= 0.5A
--
--
8.5
Ω
IGSS
Gate-Body Leakage Current
VGS=±30V; VDS= 0V
--
--
±
100
nA
IDSS
Zero Gate Voltage Drain Current
VDS=600V; VGS= 0V
--
--
1.0
uA
Ciss
Input Capacitance
VGS= 0V; VDS= 25V;
f=1.0MHz
--
275
--
pF
Coss
Output Capacitance
--
20
--
Crss
Reverse transfer Capacitance
--
5
--
td(on)
Turn-on Delay Time
VDD=300V;ID=1.0A
RG=27Ω
--
19.2
--
ns
tr
Rise Time
--
38
--
td(off)
Turn -Off Delay Time
--
49
--
tf
Fall Time
--
27.5
--
Qg
Total Gate Charge
ID=1.0A, VDS=480V
VGS=10V
--
6.6
--
nC
Qgs
Gate-to-Source Charge
--
1.4
--
Qgd
Gate-to-Drain Charge
--
2.0
--
IS
Continuous Diode Forward Current
--
--
1.0
A
VSD
Diode Forward Voltage
IS= 1.0A; VGS= 0V
--
--
1.6
V
trr
Reverse Recovery Time
Tj=25°C,IS=1.0A
di/dt=100A/μs
--
180
--
ns
Qrr
Reverse Recovery Charge
--
1.07
--
nC



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