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PD55003 Datasheet(PDF) 1 Page - STMicroelectronics

Part # PD55003
Description  RF POWER TRANSISTORS The LdmoST Plastic FAMILY
PDF  19 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

PD55003 Datasheet(HTML) 1 Page - STMicroelectronics

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March, 21 2003
PD55003
PD55003S
RF POWER TRANSISTORS
The LdmoST Plastic FAMILY
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• POUT = 3 W with 17 dB gain @ 500 MHz / 12.5 V
• NEW RF PLASTIC PACKAGE
DESCRIPTION
The PD55003 is a common source N-Channel, en-
hancement-mode lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It operates
at 12 V in common source mode at frequencies of
up to 1 GHz. PD55003 boasts the excellent gain,
linearity and reliability of ST’s latest LDMOS tech-
nology mounted in the first true SMD plastic RF
power package, PowerSO-10RF. PD55003’s su-
perior linearity performance makes it an ideal so-
lution for car mobile radio.
The PowerSO-10 plastic package, designed to of-
fer high reliability, is the first ST JEDEC approved,
high power SMD package. It has been specially
optimized for RF needs and offers excellent RF
performances and ease of assembly.
PowerSO-10RF
(formed lead)
ORDER CODE
PD55003
BRANDING
PD55003
PowerSO-10RF
(Straight lead)
ORDER CODE
PD55003S
BRANDING
PD55003S
ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C)
Symbol
Parameter
Value
Unit
V(BR)DSS
Drain-Source Voltage
40
V
VGS
Gate-Source Voltage
± 20
V
ID
Drain Current
2.5
A
PDISS
Power Dissipation (@ Tc = 70°C)
31.7
W
Tj
Max. Operating Junction Temperature
165
°C
TSTG
Storage Temperature
-65 to +150
°C
THERMAL DATA
Rth(j-c)
Junction -Case Thermal Resistance
3.0
°C/W
Mounting recommendations are available in
www.st.com/rf/ (look for application note AN1294)


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