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MP03XXX360 Datasheet(PDF) 4 Page - Dynex Semiconductor |
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MP03XXX360 Datasheet(HTML) 4 Page - Dynex Semiconductor |
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4 / 8 page ![]() MP03XXX360 4/8 www.dynexsemi.com 100 10 1.0 0.1 0.01 0.001 Time - (s) 0.15 0 0.10 0.05 d.c. Fig. 6 Transient thermal impedance - dc Fig. 3 Maximum (limit) on-state characteristics Fig. 4 Surge (non-repetitive) on-state current vs time (Thyristor or diode with 50% V RRM at T case = 130˚C) Fig. 5 Gate characteristics 1600 1200 800 400 0 0.6 1.0 1.4 1.8 Instantaneous on-state voltage, VT - (V) Measured under pulse conditions Tj = 125˚C 0.8 1.2 1.6 20 15 10 5 0 110 1 2 3 45 50 ms Cycles at 50Hz Duration 150 200 250 300 I2t I2t = Î2 x t 2 350 400 450 500 100 10 1.0 0.1 0.001 0.1 0.01 0.1 10 Tj = 125˚C Gate trigger current, IGT - (A) Tj = 25˚C Table gives pulse power PGM in Watts Pulse Width µs 20 25 100 500 1ms 10ms 50 100 100 100 100 100 10 100 100 100 100 100 50 - 400 100 100 100 25 - - Frequency Hz Upp er limit 99% Lower limit 1% |
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