AWR

2

88

B

G

Prefix

Generation

Variant

Num RX/TX Channels

Safety

1, 2 = 76 - 81GHz

1 = FE

RX = 8

TX = 8

Q = Quality Managed

A = ASIL A Capable / SIL 1

B = ASIL B Capable / SIL 2

C = ASIL C Capable / SIL 3

D = ASIL D Capable

Tray or Tape & Reel

Package

Security

T = Small Reel

R = Tape & Reel

Blank = Tray

APE = FCCSP, LOP

G = General

S = Secure

D = Development Secure

XA = Pre-production Automotive

AWR = Production Automotive

1

APE

R

A

Version

A = ES2.0

Figure 5-1. Device Nomenclature

5.2 Tools and Software

Boundary scan database of testable input and output pins for IEEE 1149.1 of the specific device can be obtained

by contacting a TI representative.

IBIS model IO buffer information model for the IO buffers of the device can be obtained by contacting a TI

representative. For simulation on a circuit board, see IBIS Open Forum.

5.3 Documentation support

To receive notification of documentation updates, navigate to the device product folder on ti.com. Click on

Notifications to register and receive a weekly digest of any product information that has changed. For change

details, review the revision history included in any revised document.

The contents in this section will be updated in subsequent versions.

5.4 Support Resources

TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight

from the experts. Search existing answers or ask your own question to get the quick design help you need.

Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do

not necessarily reflect TI's views; see TI's Terms of Use.

5.5 Trademarks

TI E2E™ is a trademark of Texas Instruments.

All trademarks are the property of their respective owners.

5.6 Electrostatic Discharge Caution

This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled

with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.

ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may

be more susceptible to damage because very small parametric changes could cause the device not to meet its published

specifications.

www.ti.com

AWR2188

SLVSKO8B – DECEMBER 2025 – REVISED SEPTEMBER 2026

Copyright © 2026 Texas Instruments Incorporated

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