CHA5051

7-16GHz Medium Power Amplifier

Ref. : DSCHA50517152 - 01 Jun 07

2/14

Specifications subject to change without notice

Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE

Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09

Electrical Characteristics

Tamb.=25°C, Vd=4.5V Id=310mA

Symbol

Parameter

Min

Typ

Max

Unit

Fop

Operating frequency range

7

16

GHz

G

Small signal gain

25

dB

P1dB

Pulsed output power at 1dB compression

25

dBm

P03

Output power at 3dB gain compression

26

dBm

NF

Noise Figure

3

dB

VSWRin

Input VSWR

2.5:1

VSWRout

Output VSWR

2:1

IP3

Output IP3

from 7 to 13GHz

from 14 to 16GHz

33

29

dBm

Vd

DC voltage

4.5

V

Id

Bias current

310

mA

These values are representative for on-wafer measurements that are made without bonding wires at

the RF ports.

Absolute Maximum Ratings

Tamb. = 25°C (1)

Symbol

Parameter

Values

Unit

Vd

Maximum Drain bias voltage

+5

V

Id

Drain bias current with Vd=4.5V

390

mA

Vg

Gate bias voltage

-2 to +0.4

V

Pin

Maximum input power overdrive (2)

+10

dBm

Tch

Maximum channel temperature

+175

°C

Ta

Operating temperature range

-40 to +85

°C

Tstg

Storage temperature range

-55 to +125

°C

(1) Operation of this device above anyone of these parameters may cause permanent damage.

(2) Duration < 1s.