SP8M4

Transistors

Rev.B

2/5

N-ch

Electrical characteristics (Ta=25

°C)

Parameter

Symbol

IGSS

Yfs

Min.

−

Typ.

Max.

Unit

Conditions

V(BR) DSS

IDSS

VGS (th)

RDS (on)

Ciss

Coss

Crss

td (on)

tr

td (off)

tf

Qg

Qgs

Qgd

∗

∗

∗

∗

∗

∗

∗

∗

∗

Gate-source leakage

Drain-source breakdown voltage

Zero gate voltage drain current

Gate threshold voltage

Static drain-source on-state

resistance

Forward transfer admittance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Total gate charge

Gate-source charge

Gate-drain charge

∗Pulsed

−

10

µAVGS=20V, VDS=0V

VDD 15V

30

−−

VID

=1mA, VGS=0V

−−

1

µAVDS=30V, VGS=0V

1.0

−

2.5

V

VDS

=10V, ID=1mA

−

12

18

ID

=9.0A, VGS=10V

−

16

24

m

Ω ID=9.0A, VGS=4.5V

−

17

25

ID

=9.0A, VGS=4V

7.0

−−

SID

=9.0A, VDS=10V

−

1190

−

pF

VDS

=10V

−

340

190

−

pF

VGS

=0V

−

10

−

pF

f

=1MHz

VGS

=10V

RL

=3.33Ω

RG

=10Ω

−

15

−

ns

−

55

−

ns

−

22

−

ns

−

15

−

ns

−

3.0

−

nC

−

6.1

−

nC

VGS

=5V

−−

nC

ID

=9.0A

ID

=4.5A, VDD 15V

Body diode characteristics (Source-Drain) (Ta=25

°C)

VSD

−−

1.2

V

IS

=6.4A, VGS=0V

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

∗

Forward voltage

∗Pulsed