SP8M4

Transistors

Rev.B

3/5

P-ch

Electrical characteristics (Ta=25

°C)

Parameter

Symbol

IGSS

Yfs

Min.

−

Typ.

Max.

Unit

Conditions

V(BR) DSS

IDSS

VGS (th)

RDS (on)

Ciss

Coss

Crss

td (on)

tr

td (off)

tf

Qg

Qgs

Qgd

∗

∗

∗

∗

∗

∗

∗

∗

∗

Gate-source leakage

Drain-source breakdown voltage

Zero gate voltage drain current

Gate threshold voltage

Static drain-source on-state

resistance

Forward transfer admittance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Total gate charge

Gate-source charge

Gate-drain charge

∗Pulsed

−−10

µA

−30

−−

V

−−

−1

µA

−1.0

−−2.5

V

−

20

28

−

25

35

m

Ω

−

30

42

6.0

−−

S

−

2600

−

pF

−

450

350

−

pF

−

20

−

pF

−

50

−

ns

−

110

−

ns

−

70

−

ns

−

25

−

ns

−

5.5

−

nC

−

10

−

nC

−−

nC

VGS

= −20V, VDS=0V

VDD

−15V

ID

= −1mA, VGS=0V

VDS

= −30V, VGS=0V

VDS

= −10V, ID= −1mA

ID

= −7.0A, VGS= −10V

ID

= −3.5A, VGS= −4.5V

ID

= −3.5A, VGS= −4.0V

ID

= −3.5A, VDS= −10V

VDS

= −10V

VGS

=0V

f

=1MHz

VGS

= −10V

RL

=4.29Ω

RG

=10Ω

VGS

= −5V

ID

= −7.0A

ID

= −3.5A, VDD −15V

Body diode characteristics (Source-Drain) (Ta=25

°C)

VSD

−−

−1.2

V

IS

= −1.6A, VGS=0V

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

Forward voltage