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TO-263 Datasheet(PDF) 3 Page - Vishay Siliconix

Part # TO-263
Description  N-Channel 100-V (D-S) 175 °C MOSFET
PDF  6 Pages
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

TO-263 Datasheet(HTML) 3 Page - Vishay Siliconix

  TO-263 Datasheet HTML 1Page - Vishay Siliconix TO-263 Datasheet HTML 2Page - Vishay Siliconix TO-263 Datasheet HTML 3Page - Vishay Siliconix TO-263 Datasheet HTML 4Page - Vishay Siliconix TO-263 Datasheet HTML 5Page - Vishay Siliconix TO-263 Datasheet HTML 6Page - Vishay Siliconix  
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Document Number: 71141
S-61008–Rev. D, 12-Jun-06
www.vishay.com
3
Vishay Siliconix
SUP/SUB85N10-10
TYPICAL CHARACTERISTICS
TA = 25 °C, unless otherwise noted
Output Characteristics
Transconductance
Capacitance
0
50
100
150
200
250
0
246
8
10
VDS − Drain-to-Source Voltage (V)
3 V
VGS = 10 thru 6 V
4 V
5 V
0
50
100
150
200
250
0
204060
80
100
TC = - 55 °C
25 °C
125 °C
ID − Drain Current (A)
0
2000
4000
6000
8000
10000
015
30
45
60
75
VDS − Drain-to-Source Voltage (V)
Ciss
Coss
Crss
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
50
100
150
200
01
2
3
4
5
6
VGS− Gate-to-Source Voltage (V)
25 °C
- 55 °C
TC = 125 °C
0.000
0.005
0.010
0.015
0.020
020
40
60
80
100
120
ID − Drain Current (A)
VGS = 10 V
VGS = 4.5 V
0
4
8
12
16
20
0
50
100
150
200
Qg − Total Gate Charge (nC)
VDS = 50 V
ID = 85 A



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