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STB18N20 Datasheet(PDF) 1 Page - STMicroelectronics

Part # STB18N20
Description  N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
PDF  10 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB18N20 Datasheet(HTML) 1 Page - STMicroelectronics

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STB18N20
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
PRELIMINARY DATA
s
TYPICAL RDS(on) = 0.145
Ω
s
AVALANCHE RUGGED TECHNOLOGY
s
100% AVALANCHE TESTED
s
REPETITIVE AVALANCHE DATA AT 100
oC
s
LOW GATE CHARGE
s
VERY HIGH CURRENT CAPABILITY
s
APPLICATION ORIENTED
CHARACTERIZATION
s
THROUGH-HOLE I2PAK (TO-262) POWER
PACKAGE IN TUBE (SUFFIX ”-1”)
s
SURFACE-MOUNTING D2PACK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX)
OR IN TAPE & REEL (SUFFIX ”T4”)
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SOLENOID AND RELAY DRIVERS
s
REGULATORS
s
DC-DC & DC-AC CONVERTERS
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Val ue
Uni t
VDS
Drain-source Voltage (VGS = 0)
200
V
VDGR
Drain- gate Voltage (RGS =20 k
Ω)
200
V
VGS
Gate-source Voltage
± 20
V
ID
Drain Current (continuous) at Tc =25
oC18
A
ID
Drain Current (continuous) at Tc =100
oC11
A
IDM(
•)
Drain Current (pulsed)
72
A
Ptot
Total Dissipation at Tc =25
oC
125
W
Derat ing Factor
1
W/
oC
Tstg
St orage Temperature
-65 to 150
oC
Tj
Max. Operating Junction Temperature
150
oC
(
•) Pulse width limited by safe operating area
TYPE
VDSS
RDS(on)
ID
ST B18N20
200 V
< 0.18
Ω
18 A
March 1996
1
2 3
1
3
I2PAK
TO-262
D2PAK
TO-263
1/10


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