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STB18N20 Datasheet(PDF) 2 Page - STMicroelectronics

Part # STB18N20
Description  N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
PDF  10 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB18N20 Datasheet(HTML) 2 Page - STMicroelectronics

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THERMAL DATA
Rthj-ca se
Rthj- amb
Rthj- amb
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead T emperature For Soldering Purpose
1
62.5
0.5
300
oC/W
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symb ol
Parameter
Max Valu e
Uni t
IAR
Avalanche Current , Repet itive or Not -Repetitive
(pulse widt h limited by Tj max,
δ <1%)
18
A
EAS
Single Pulse Avalanche Energy
(starting Tj =25
oC, I
D =IAR,VDD =25 V )
50
mJ
EAR
Repetit ive Avalanche Energy
(pulse widt h limited by Tj max,
δ <1%)
10
mJ
IAR
Avalanche Current , Repet itive or Not -Repetitive
(Tc =100
oC, pulse width limited by Tj max, δ <1%)
11
A
ELECTRICAL CHARACTERISTICS (Tcase =25
oC unless otherwise specified)
OFF
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
V(BR)DSS
Drain-source
Breakdown Volt age
ID = 250
µAVGS = 0
200
V
IDSS
Zero Gat e Voltage
Drain Current (VGS =0)
VDS =Max Rating
VDS =Max Rating x0.8
Tc = 125
oC
250
1000
µA
µA
IGSS
Gate-body Leakage
Current (VDS =0)
VGS =
± 20 V
±100
nA
ON (
∗)
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
VGS(th)
Gate T hreshold Voltage VDS =VGS
ID =250
µA2
3
4
V
RDS( on)
St atic Drain-source On
Resistance
VGS =10 V
ID = 9 A
0.145
0.18
Ω
ID(o n)
On Stat e Drain Current
VDS >ID(on) xRDS(on) max VGS =10 V
18
A
DYNAMIC
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
gfs (
∗)Forward
Transconductance
VDS >ID(on) xRDS(on) max
ID =9 A
6. 5
13
S
Ciss
Coss
Crss
Input Capacitance
Output Capacit ance
Reverse Transfer
Capacitance
VDS = 25V
f = 1MHz
VGS = 0
1600
270
50
2100
350
70
pF
pF
pF
STB18N20
2/10



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