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RT3C99M Datasheet(PDF) 2 Page - Isahaya Electronics Corporation

Part # RT3C99M
Description  Composite Transistor
PDF  3 Pages
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Manufacturer  ISAHAYA [Isahaya Electronics Corporation]
Direct Link  http://www.idc-com.co.jp
Logo ISAHAYA - Isahaya Electronics Corporation

RT3C99M Datasheet(HTML) 2 Page - Isahaya Electronics Corporation

  RT3C99M Datasheet HTML 1Page - Isahaya Electronics Corporation RT3C99M Datasheet HTML 2Page - Isahaya Electronics Corporation RT3C99M Datasheet HTML 3Page - Isahaya Electronics Corporation  
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TYPICAL CHARACTERISTICS (Tr1、Tr2)
RT3C99M
Composite Transistor
For Muting Application
Silicon Npn Epitaxial Type
ELECTRICAL CHARACTERISTICS (Ta=25℃)
Limits
Symbol
Parameter
Test conditions
Min
Typ
Max
Unit
ICBO
Collector cut off current
VCB =50V,IE=0
-
-
0.1
μ
A
IEBO
Emitter cut off current
VEB=40V,IC=0
-
-
0.1
μ
A
hFE*
DC forward current gain
VCE=2V,IC=4mA
200
-
1200
-
VCE(sat)
Collector to Emitter saturation voltage
IC=30mA,IB=3mA
-
30
-
V
fT
Gain band width product
VCE=6V,IE=-4mA
-
30
-
MHZ
Cob
Collector output capacitance
VCB=10V,IE=0,f=1MHZ
-
5.0
-
pF
Ron
Output On-resistance
IB=5mA, f=1MHz
-
0.95
-
Ω
* : It shows hFE classification in right table.
Item
A
B
hFE
200～700
350～1200
ISAHAYA ELECTRONICS CORPORATION
COMMON EMITTER OUTPUT
0
10
20
30
40
50
60
024
68
10
COLLECTOR TO EMITTER VOLTAGE　VCE(V)
IB=50μA
Ta=25℃
100μA
150μA
200μA
250μA
300μA
COMMON EMITTER TRANSFER
0
10
20
30
40
50
0
0.2
0.4
0.6
0.8
1
BASE TO EMITTER VOLTAGE VBE(V)
Ta=25℃
VCE=2V



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