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CP1008 Datasheet(PDF) 2 Page - Texas Instruments |
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CP1008 Datasheet(HTML) 2 Page - Texas Instruments |
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2 / 38 page ![]() DESCRIPTION CONTINUED B1 C1 D1 SW PMID PGND B2 C2 D2 SW PMID PGND B3 C3 D3 SW PMID PGND B4 C4 D4 STAT SDA OTG A1 VBUS A2 VBUS A3 BOOT A4 SCL E1 CSIN E2 AUX PWR E3 VREF E4 CSOUT bq24152 SLUS847 – JUNE 2008 ...................................................................................................................................................................................................... www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. During the charging process, the bq24152 monitors its junction temperature (TJ) and reduces the charge current once TJ increases to approximately 125°C. To support USB OTG device, bq24152 provides VBUS (approximately 5.05V) by boosting the battery voltage. The bq24152 is available in 20-pin WCSP package. WCSP PACKAGE (Top View) TERMINAL FUNCTIONS TERMINAL I/O DESCRIPTION NAME NO. Battery voltage and current sense input. Bypass it with a ceramic capacitor (minimum 0.1 µF) to CSOUT E4 I PGND if there are long inductive leads to battery. VBUS A1, A2 I Charger input voltage. Bypass it with a 1- µF ceramic capacitor from VBUS to PGND. Connection point between reverse blocking MOSFET and high-side switching MOSFET. Bypass it PMID B1, B2, B3 O with a minimum of 3.3- µF capacitor from PMID to PGND. SW C1, C2, C3 O Internal switch to output inductor connection. Boot-strapped capacitor for the high-side MOSFET gate driver. Connect a 10-nF ceramic capacitor BOOT A3 O (voltage rating above 10 V) from BOOT pin to SW pin. PGND D1, D2, D3 Power ground Charge current-sense input. Battery current is sensed via the voltage drop across an external sense CSIN E1 I resistor. A 0.1- µF ceramic capacitor to PGND is required. SCL A4 I I2C interface clock. Open drain output, connect a 10-k Ω pullup resistor SDA B4 I/O I2C interface data. Open drain output, connect a 10-k Ω pullup resistor Charge status pin. Pull low when charge in progress. Open drain for other conditions. During faults, a STAT C4 O 128 µS pulse is sent out. STAT pin can be disabled by the EN_STAT bit in control register. STAT can be used to drive a LED or communicate with a host processor. Internal bias regulator voltage. Connect a 1- µF ceramic capacitor from this output to PGND. External VREF E3 O load on VREF is not allowed. Auxiliary power supply, connected to the battery pack to provide power in high-impedance mode. AUXPWR E2 I Bypass it with a 1- µF ceramic capacitor from this pin to PGND. Boost mode enable control or input current limiting selection pin. When OTG is in active status, bq24152 is forced to operate in boost mode. It has higher priority over I2C control and can be disabled OTG D4 I through control register. The logic voltage level at OTG active status can also be controlled. At POR, the OTG pin is default to be used as the input current limiting selection pin. When OTG = High, Iin – limit = 500 mA and when OTG = Low, Iin – limit = 100 mA, see the Control Register for details. 2 Submit Documentation Feedback Copyright © 2008, Texas Instruments Incorporated Product Folder Link(s): bq24152 |
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