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STD2NM60 Datasheet(PDF) 1 Page - STMicroelectronics |
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STD2NM60 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 10 page ![]() 1/10 September 2002 STD2NM60 STD2NM60-1 N-CHANNEL 600V - 2.8 Ω - 2A DPAK/IPAK Zener-Protected MDmesh™Power MOSFET (1)ISD<2A, di/dt<400A/µs, VDD<V(BR)DSS, TJ<TJMAX s TYPICAL RDS(on) = 2.8 Ω s HIGH dv/dt AND AVALANCHE CAPABILITIES s 100% AVALANCHE TESTED s LOW INPUT CAPACITANCE AND GATE CHARGE s LOW GATE INPUT RESISTANCE s TIGHT PROCESS CONTROL AND HIGH MANUFACTORING YIELDS DESCRIPTION The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain pro- cess with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar completition’s products. APPLICATIONS The MDmesh™ family is very suitable for increase the power density of high voltage converters allow- ing system miniaturization and higher efficiencies. ABSOLUTE MAXIMUM RATINGS (•)Pulse width limited by safe operating area TYPE VDSS RDS(on) ID STD2NM60 STD2NM60-1 600V 600V < 3.2 Ω < 3.2 Ω 2 A 2 A Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 600 V VDGR Drain-gate Voltage (RGS = 20 kΩ) 600 V VGS Gate- source Voltage ±30 V ID Drain Current (continuous) at TC = 25°C 2A ID Drain Current (continuous) at TC = 100°C 1.26 A IDM (q) Drain Current (pulsed) 8 A PTOT Total Dissipation at TC = 25°C 46 W Derating Factor 0.37 W/°C VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5K Ω) 1kV dv/dt(1) Peak Diode Recovery voltage slope 15 V/ns Tstg Storage Temperature –65 to 150 °C Tj Max. Operating Junction Temperature 150 °C 1 3 DPAK TO-252 3 2 1 IPAK TO-251 INTERNAL SCHEMATIC DIAGRAM |
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