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STD2NM60/STD2NM60-1

ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING ON

SWITCHING OFF

SOURCE DRAIN DIODE

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

GATE-SOURCE ZENER DIODE

PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s

ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be

applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and

cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the

usage of external components.

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Turn-on Delay Time

Rise Time

(see test circuit, Figure 3)

13

8

ns

ns

Total Gate Charge

6

8.4

nC

Gate-Source Charge

1.8

nC

Gate-Drain Charge

3.3

nC

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Off-voltage Rise Time

(see test circuit, Figure 5)

12

ns

Fall Time

25

ns

Cross-over Time

30

ns

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Source-drain Current

2

A

Source-drain Current (pulsed)

8

A

Forward On Voltage

1.5

V

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

(see test circuit, Figure 5)

516

516

2

ns

nC

A

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

(see test circuit, Figure 5)

808

890

2.2

ns

nC

A

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Gate-Source Breakdown

Voltage

Igs=± 1mA (Open Drain)

30

V