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STD3NM50/STD3NM50-1

ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING ON

SWITCHING OFF

SOURCE DRAIN DIODE

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

GATE-SOURCE ZENER DIODE

PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s

ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be

applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and

cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the

usage of external components.

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Turn-on Delay Time

Rise Time

(see test circuit, Figure 3)

7ns

10

ns

Total Gate Charge

5.5

nC

Gate-Source Charge

2.5

nC

Gate-Drain Charge

2.4

nC

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Off-voltage Rise Time

(see test circuit, Figure 5)

8ns

Fall Time

9

ns

Cross-over Time

15

ns

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Source-drain Current

3

A

Source-drain Current (pulsed)

12

A

Forward On Voltage

1.5

V

Reverse Recovery Time

(see test circuit, Figure 5)

210

ns

Reverse Recovery Charge

790

nC

Reverse Recovery Current

7.5

A

Reverse Recovery Time

(see test circuit, Figure 5)

282

ns

Reverse Recovery Charge

1.1

µC

Reverse Recovery Current

7.7

A

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Gate-Source Breakdown

Voltage

Igs=± 1mA (Open Drain)

30

V