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STD7NS20 Datasheet(PDF) 3 Page - STMicroelectronics

Part # STD7NS20
Description  N-CHANNEL 200V - 0.35ohm - 7A DPAK / IPAK MESH OVERLAY™ MOSFET
PDF  8 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STD7NS20 Datasheet(HTML) 3 Page - STMicroelectronics

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STD7NS20 / STD7NS20-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on Delay Time
VDD =100 V, ID = 3.5 A
RG = 4.7Ω VGS =10 V
(see test circuit, Figure 3)
10
ns
tr
Rise Time
15
ns
Qg
Total Gate Charge
VDD =160V, ID =18 A,
VGS =10V
31
45
nC
Qgs
Gate-Source Charge
7.5
nC
Qgd
Gate-Drain Charge
9
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
Vclamp = 160 V, ID =7A,
RG =4.7Ω, VGS = 10V
(see test circuit, Figure 5)
12
12
25
ns
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain Current
7
A
ISDM (2)
Source-drain Current (pulsed)
28
A
VSD (1)
Forward On Voltage
ISD = 7 A, VGS =0
1.5
V
trr
Reverse Recovery Time
ISD = 7 A, di/dt = 100A/µs
VDD =50V, Tj = 150°C
(see test circuit, Figure 5)
170
ns
Qrr
Reverse Recovery Charge
0.95
µC
IRRM
Reverse Recovery Current
11
A



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