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STE48NM50 Datasheet(PDF) 1 Page - STMicroelectronics

Part # STE48NM50
Description  N-CHANNEL 500V - 0.08Ω - 48A ISOTOP MDmesh™ Power MOSFET
PDF  8 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STE48NM50 Datasheet(HTML) 1 Page - STMicroelectronics

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September 2002
STE48NM50
N-CHANNEL 500V - 0.08
Ω - 48A ISOTOP
MDmesh™Power MOSFET
n
TYPICAL RDS(on) = 0.08Ω
n
HIGH dv/dt AND AVALANCHE CAPABILITIES
n
100% AVALANCHE TESTED
n
LOW INPUT CAPACITANCE AND GATE
CHARGE
n
LOW GATE INPUT RESISTANCE
n
TIGHT PROCESS CONTROL AND HIGH
MANUFACTURING YIELDS
DESCRIPTION
The MDmesh™ is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company’s PowerMESH™ horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company’s proprietary strip technique yields overall
dynamic performance that is significantly better than
that of similar competition’s products.
APPLICATIONS
The MDmesh™ family is very suitable for increasing
power density of high voltage converters allowing
system miniaturization and higher efficiencies.
ABSOLUTE MAXIMUM RATINGS
(•)Pulse width limited by safe operating area
TYPE
VDSS
RDS(on)
ID
STE48NM50
500V
< 0.1
Ω
48 A
Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
500
V
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
500
V
VGS
Gate- source Voltage
±30
V
ID
Drain Current (continuous) at TC = 25°C
48
A
ID
Drain Current (continuous) at TC = 100°C
30
A
IDM (l)
Drain Current (pulsed)
192
A
PTOT
Total Dissipation at TC = 25°C
450
W
Derating Factor
3.6
W/°C
dv/dt (1)
Peak Diode Recovery voltage slope
15
V/ns
Tstg
Storage Temperature
–65 to 150
°C
Tj
Max. Operating Junction Temperature
150
°C
(1) ISD ≤48A, di/dt ≤400A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
ISOTOP
INTERNAL SCHEMATIC DIAGRAM


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