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STE48NM50 Datasheet(PDF) 2 Page - STMicroelectronics

Part # STE48NM50
Description  N-CHANNEL 500V - 0.08Ω - 48A ISOTOP MDmesh™ Power MOSFET
PDF  8 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STE48NM50 Datasheet(HTML) 2 Page - STMicroelectronics

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STE48NM50
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THERMAL DATA
(*) with conductive GREASE Applies
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
ON (1)
DYNAMIC
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Rthj-case
Thermal Resistance Junction-case
Max
0.28
°C/W
Rthc-sink (*)
Thermal Resistance Case-sink
Typ
0.05
°C/W
Symbol
Parameter
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
15
A
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
810
mJ
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
500
V
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
10
µA
VDS = Max Rating, TC = 125 °C
100
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 30V
±100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250µA
34
5
V
RDS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 24A
0.08
0.1
Ω
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs (1)
Forward Transconductance
VDS > ID(on) x RDS(on)max,
ID = 24A
20
S
Ciss
Input Capacitance
VDS = 25V, f = 1 MHz, VGS = 0
3700
pF
Coss
Output Capacitance
610
pF
Crss
Reverse Transfer
Capacitance
50
pF
RG
Gate Input Resistance
f=1 MHz Gate DC Bias = 0
Test Signal Level = 20mV
Open Drain
1.7
Ω



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