STP22NM50FP datasheet(2/10 Pages) STMICROELECTRONICS

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STP22NM50 / STP22NM50FP / STB22NM50 / STB22NM50-1

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THERMAL DATA

AVALANCHE CHARACTERISTICS

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)

OFF

ON (1)

DYNAMIC

1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%

VDSS.

TO-220/I2PAK/

D2PAK

TO-220FP

Rthj-case

Thermal Resistance Junction-case

Max

0.65

2.8

°C/W

Rthj-amb

Thermal Resistance Junction-ambient

Max

62.5

°C/W

Maximum Lead Temperature For Soldering Purpose

300

°C

Symbol

Parameter

Max Value

Unit

IAR

Avalanche Current, Repetitive or Not-Repetitive

(pulse width limited by Tj max)

EAS

Single Pulse Avalanche Energy

(starting Tj = 25 °C, ID = 5 A, VDD =50 V)

650

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown Voltage

ID = 250 µA, VGS = 0

500

IDSS

Zero Gate Voltage

Drain Current (VGS =0)

VDS = Max Rating

1µA

VDS = Max Rating, TC = 125 °C

µA

IGSS

Gate-body Leakage

Current (VDS =0)

VGS = ±30V

±100

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VGS(th)

Gate Threshold Voltage

VDS =VGS,ID = 250µA

RDS(on)

Static Drain-source On

Resistance

VGS =10V, ID = 10A

0.16

0.215

Ω

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

gfs (1)

Forward Transconductance

VDS >ID(on) xRDS(on)max,

ID = 10A

Ciss

Input Capacitance

VDS = 25V,f= 1MHz,VGS =0

1480

Coss

Output Capacitance

285

Crss

Reverse Transfer

Capacitance

Coss eq. (2)

Equivalent Output

Capacitance

VGS =0V, VDS = 0V to 400V

130

Gate Input Resistance

f=1 MHz Gate DC Bias=0

Test Signal Level=20mV

Open Drain

1.6

Ω

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