STP22NM50FP datasheet(3/10 Pages) STMICROELECTRONICS

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STP22NM50 / STP22NM50FP / STB22NM50 / STB22NM50-1

ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING ON

SWITCHING OFF

SOURCE DRAIN DIODE

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on Delay Time

VDD =250 V, ID =10 A

RG = 4.7Ω VGS =10 V

(see test circuit, Figure 3)

Rise Time

Total Gate Charge

VDD =400 V, ID =20 A,

VGS =10 V

Qgs

Gate-Source Charge

Qgd

Gate-Drain Charge

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

tr(Voff)

Off-voltage Rise Time

VDD = 400 V, ID =20A,

RG =4.7Ω, VGS =10 V

(see test circuit, Figure 5)

9ns

Fall Time

8.5

Cross-over Time

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain Current

ISDM (2)

Source-drain Current (pulsed)

VSD (1)

Forward On Voltage

ISD =20A,VGS =0

1.5

trr

Qrr

IRRM

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

ISD = 20 A, di/dt = 100A/µs,

VDD =100 V, Tj =25°C

(see test circuit, Figure 5)

350

4.6

µC

trr

Qrr

IRRM

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

ISD = 20 A, di/dt = 100A/µs,

VDD =100 V, Tj =150°C

(see test circuit, Figure 5)

435

5.9

µC

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