STB22NS25Z datasheet(1/10 Pages) STMICROELECTRONICS

Part #	STB22NS25Z

Description	N-CHANNEL 250V - 0.13ohm - 22A TO-220/D2PAK Zener-Protected MESH OVERLAY™ MOSFET

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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January 2002

STP22NS25Z

STB22NS25Z

N-CHANNEL 250V - 0.13

Ω - 22A TO-220/D2PAK

Zener-Protected MESH OVERLAY™ MOSFET

(1) ISD ≤22A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.

INTERNAL SCHEMATIC DIAGRAM

s

TYPICAL RDS(on) = 0.13 Ω

s

EXTREMELY HIGH dv/dt CAPABILITY

s

100% AVALANCHE TESTED

DESCRIPTION

Using the latest high voltage MESH OVERLAY™

process, STMicroelectronics has designed an ad-

vanced family of power MOSFETs with outstanding

performance. The new patented STrip layout cou-

pled with the Company’s proprietary edge termina-

tion structure, makes it suitable in coverters for

lighting applications.

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SWITH MODE POWER SUPPLIES (SMPS)

s

DC-DC CONVERTERS FOR TELECOM,

INDUSTRIAL, AND LIGHTING EQUIPMENT

ABSOLUTE MAXIMUM RATINGS

(•)Pulse width limited by safe operating area

TYPE

VDSS

RDS(on)

ID

STP22NS25Z

STB22NS25Z

250 V

< 0.15

Ω

< 0.15

Ω

22 A

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS = 0)

250

V

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

250

V

VGS

Gate- source Voltage

± 20

V

ID

Drain Current (continuos) at TC = 25°C

22

A

ID

Drain Current (continuos) at TC = 100°C

13.9

A

IDM (l)

Drain Current (pulsed)

88

A

PTOT

Total Dissipation at TC = 25°C

135

W

Derating Factor

1.07

W/°C

VESD(G-S)

Gate source ESD(HBM-C=100pF, R=1.5K

Ω)

2500

V

dv/dt (1)

Peak Diode Recovery voltage slope

5

V/ns

Tstg

Storage Temperature

–55 to 150

°C

Tj

Max. Operating Junction Temperature

TO-220

1

2

3

1

3

D2PAK

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