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STB22NS25Z Datasheet(PDF) 3 Page - STMicroelectronics

Part # STB22NS25Z
Description  N-CHANNEL 250V - 0.13ohm - 22A TO-220/D2PAK Zener-Protected MESH OVERLAY™ MOSFET
PDF  10 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB22NS25Z Datasheet(HTML) 3 Page - STMicroelectronics

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STP22NS25Z / STB22NS25Z
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
GATE-SOURCE ZENER DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to souce. In this respect the Zener voltage is appropriate to achieve an efficient and cost-
effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage
of external components.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on Delay Time
VDD = 125 V, ID = 11 A
RG = 4.7Ω VGS = 10 V
(see test circuit, Figure 3)
20
ns
tr
Rise Time
30
ns
Qg
Total Gate Charge
VDD = 200V, ID = 20 A,
VGS = 10V
108
151
nC
Qgs
Gate-Source Charge
11
nC
Qgd
Gate-Drain Charge
40
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(Voff)
tf
Turn-off- Delay Time
Fall Time
VDD = 125V, ID = 11 A,
RG =4.7Ω, VGS = 10V
(see test circuit, Figure 3)
100
78
ns
ns
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
Vclamp = 200V, ID = 22 A,
RG =4.7Ω, VGS = 10V
(see test circuit, Figure 5)
37
65
110
ns
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain Current
22
A
ISDM (2)
Source-drain Current (pulsed)
88
A
VSD (1)
Forward On Voltage
ISD = 22 A, VGS = 0
1.6
V
trr
Reverse Recovery Time
ISD = 22 A, di/dt = 100A/µs
VDD = 50V, Tj = 150°C
(see test circuit, Figure 5)
292
ns
Qrr
Reverse Recovery Charge
3065
nC
IRRM
Reverse Recovery Current
21
A
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
BVGSO
Gate-Source Breakdown
Voltage
Igs=± 500
µA (Open Drain)
20
V



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