STP5N120 datasheet(4/10 Pages) STMICROELECTRONICS

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Electrical characteristics

STP5N120

4/10

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 4.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 1mA, VGS= 0

1200

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = Max rating,

VDS = Max rating,Tc=125°C

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ± 30V

±10

µA

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 100µA

33.75

4.5

RDS(on)

Static drain-source on

resistance

VGS= 10V, ID= 2.3A

2.8

3.5

Ω

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

gfs

(1)

Pulsed: pulse duration=300µs, duty cycle 1.5%

Forward transconductance

VDS = 15V, ID = 2.3A

Tbd

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS =25V, f=1MHz, VGS=0

120

115

Coss eq.

(2)

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS

Equivalent output

capacitance

VGS = 0V, VDS = 0V to 800V

Intrinsic gate resistance

f = 1MHz open drain

Tbd

Ω

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD=960V, ID = 4.4A

VGS =10V

(see Figure 2)

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