STP4NB30 datasheet(1/9 Pages) STMICROELECTRONICS

Part #	STP4NB30

Description	N-CHANNEL 300V - 1.8ohm - 4A - TO-220/TO-220FP PowerMesh™ MOSFET

PDF	9 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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1 / 9 page

1/9

May 2001

STP4NB30

STP4NB30FP

N-CHANNEL 300V - 1.8

Ω - 4A - TO-220/TO-220FP

PowerMesh™ MOSFET

(1)ISD ≤4 A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

(*) Limited only by Maximum Temperature Allowed

s

TYPICAL RDS(on) = 1.8 Ω

s

EXTREMELY HIGH dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

NEW HIGH VOLTAGE BENCHMARK

s

GATE CHARGE MINIMIZED

DESCRIPTION

Using the latest high voltage MESH OVERLAY™

process, STMicroelectronics has designed an ad-

vanced family of power MOSFETs with outstanding

performances. The new patent pending strip layout

coupled with the Company’s proprieraty edge termi-

nation structure, gives the lowest RDS(on) per area,

exceptional avalanche and dv/dt capabilities and

unrivalled gate charge and switching characteris-

tics.

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SWITH MODE POWER SUPPLIES (SMPS)

s

DC-AC CONVERTERS FOR TELECOM,

INDUSTRIAL AND CONSUMER

ENVIRONMENT

ABSOLUTE MAXIMUM RATINGS

(•)Pulse width limited by safe operating area

TYPE

VDSS

RDS(on)

ID

STP4NB30

STP4NB30FP

300 V

< 2

Ω

< 2

Ω

4 A

Symbol

Parameter

Value

Unit

STP4NB30

STP4NB30FP

VDS

Drain-source Voltage (VGS = 0)

300

V

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

300

V

VGS

Gate- source Voltage

±30

V

ID

Drain Current (continuos) at TC = 25°C

4

4 (*)

A

ID

Drain Current (continuos) at TC = 100°C

2.5

2.5 (*)

A

IDM (1)

Drain Current (pulsed)

16

16 (*)

A

PTOT

Total Dissipation at TC = 25°C

70

30

W

Derating Factor

0.56

0.24

W/°C

dv/dt

Peak Diode Recovery voltage slope

4

V/ns

VISO

Insulation Withstand Voltage (DC)

-

2000

V

Tstg

Storage Temperature

–65 to 150

°C

Tj

Max. Operating Junction Temperature

150

°C

TO-220

1

2

3

1

2

3

TO-220FP

INTERNAL SCHEMATIC DIAGRAM

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