STP4NB30 datasheet(3/9 Pages) STMICROELECTRONICS

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STP4NB30/STP4NB30FP

ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING ON

SWITCHING OFF

SOURCE DRAIN DIODE

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on Delay Time

VDD = 150V, ID = 2.5 A

RG =4.7Ω VGS = 10V

(see test circuit, Figure 3)

9ns

Rise Time

Total Gate Charge

VDD = 240V, ID = 5 A,

VGS = 10V

Qgs

Gate-Source Charge

7.5

Qgd

Gate-Drain Charge

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

tr(Voff)

Off-voltage Rise Time

VDD = 240V, ID = 5 A,

RG = 4.7Ω, VGS = 10V

(see test circuit, Figure 5)

Fall Time

Cross-over Time

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain Current

ISDM (2)

Source-drain Current (pulsed)

VSD (1)

Forward On Voltage

ISD = 4 A, VGS = 0

1.5

trr

Reverse Recovery Time

ISD = 5 A, di/dt = 100A/µs,

VDD = 100V, Tj = 150°C

(see test circuit, Figure 5)

180

Qrr

Reverse Recovery Charge

800

IRRM

Reverse Recovery Current

Safe Operating Area for TO-220FP

Safe Operating Area for TO-220

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