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STP4NC60FP Datasheet(PDF) 1 Page - STMicroelectronics |
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STP4NC60FP Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 10 page  1/10 April 2003 STP4NC60 - STP4NC60FP STB4NC60-1 N-CHANNEL 600V - 1.8 Ω - 4.2A TO-220/TO-220FP/I2PAK PowerMesh™II MOSFET (*)Limited only by maximum Temperature allowed s TYPICAL RDS(on) = 1.8Ω s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED s NEW HIGH VOLTAGE BENCHMARK s GATE CHARGE MINIMIZED DESCRIPTION The PowerMESH ™II is the evolution of the first generation of MESH OVERLAY ™. The layout re- finements introduced greatly improve the Ron*area figure of merit while keeping the device at the lead- ing edge for what concerns swithing speed, gate charge and ruggedness. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVERS ABSOLUTE MAXIMUM RATINGS (•)Pulse width limited by safe operating area (1)ISD ≤4.2A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX. TYPE VDSS RDS(on) ID STP4NC60 STP4NC60FP STB4NC60-1 600V 600V 600V <2.2 Ω <2.2 Ω <2.2 Ω 4.2A 4.2A 4.2A Symbol Parameter Value Unit STP(B)4NC60(-1) STP4NC60FP VDS Drain-source Voltage (VGS =0) 600 V VDGR Drain-gate Voltage (RGS =20kΩ) 600 V VGS Gate- source Voltage ±30 V ID Drain Current (continuos) at TC = 25°C 4.2 4.2(*) A ID Drain Current (continuos) at TC = 100°C 2.6 2.6(*) A IDM ( ) Drain Current (pulsed) 16.8 16.8(*) A PTOT Total Dissipation at TC = 25°C 100 35 W Derating Factor 0.8 0.28 W/°C dv/dt(1) Peak Diode Recovery voltage slope 3.5 3.5 V/ns VISO Insulation Withstand Voltage (DC) - 2500 V Tstg Storage Temperature –65to150 °C Tj Max. Operating Junction Temperature INTERNAL SCHEMATIC DIAGRAM TO-220 1 2 3 TO-220FP 1 2 3 I2PAK (Tabless TO-220) |
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