STP4NC60FP datasheet(3/10 Pages) STMICROELECTRONICS

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STP4NC60/FP/STB4NC60-1

ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING ON

SWITCHING OFF

SOURCE DRAIN DIODE

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on Delay Time

VDD =300V, ID =2A

RG = 4.7Ω VGS =10V

(see test circuit, Figure 3)

Rise Time

Total Gate Charge

VDD =480V, ID = 4A,

VGS =10V

16.5

23.1

Qgs

Gate-Source Charge

2.5

Qgd

Gate-Drain Charge

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

tr(Voff)

Off-voltage Rise Time

VDD = 480V, ID =4A,

RG =4.7Ω, VGS = 10V

(see test circuit, Figure 5)

Fall Time

Cross-over Time

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain Current

4.2

ISDM (2)

Source-drain Current (pulsed)

16.8

VSD (1)

Forward On Voltage

ISD = 4.2A, VGS =0

1.6

trr

Reverse Recovery Time

ISD = 4A, di/dt = 100A/µs,

VDD =100V, Tj =150°C

(see test circuit, Figure 5)

600

Qrr

Reverse Recovery Charge

2.7

µC

IRRM

Reverse Recovery Current

Safe Operating Area for TO-220FP

Safe Operating Area for TO-220 / I2PAK

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