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STB80NF55-08 Datasheet(PDF) 3 Page - STMicroelectronics |
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STB80NF55-08 Datasheet(HTML) 3 Page - STMicroelectronics |
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3 / 11 page ![]() 3/11 STB80NF55-08/-1 STP80NF55-08 SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE (*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. ( •)Pulse width limited by safe operating area. Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time VDD = 30 V ID = 40 A RG = 4.7 Ω VGS = 10 V (Resistive Load, Figure 3) 25 85 ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 44V ID = 80 A VGS= 10V 115 24 46 155 nC nC nC Symbol Parameter Test Conditions Min. Typ. Max. Unit td(off) tf Turn-off Delay Time Fall Time VDD = 30 V ID = 40 A RG = 4.7Ω, VGS = 10 V (Resistive Load, Figure 3) 70 25 ns ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (•) Source-drain Current Source-drain Current (pulsed) 80 320 A A VSD (*) Forward On Voltage ISD = 80 A VGS = 0 1.5 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 80 A di/dt = 100A/µs VDD = 25 V Tj = 150°C (see test circuit, Figure 5) 80 245 6.4 ns nC A ELECTRICAL CHARACTERISTICS (continued) Safe Operating Area Thermal Impedance |
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