L6566B datasheet(14/51 Pages) STMICROELECTRONICS

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Electrical characteristics

L6566B

14/51

Symbol

Parameter

Test condition

Min

Typ

Max

Unit

Current sense comparator

ICS

Input bias current

VCS = 0

-1

µA

tLEB

Leading edge blanking

150

250

300

td(H-L)

Delay to output

100

VCSx

Overcurrent setpoint

VCOMP = VCOMPHI, VVFF = 0 V

0.92

1.08

VCOMP = VCOMPHI, VVFF = 1.5 V

0.45

0.5

0.55

VCOMP = VCOMPHI, VVFF = 3.0 V

0.1

VCSdis

Hiccup-mode OCP level

(1)

1.4

1.5

1.6

PWM control

VCOMPHI

Upper clamp voltage

ICOMP = 0

5.7

VCOMPLO

Lower clamp voltage

ISOURCE = -1 mA

2.0

VCOMPSH

Linear dynamics upper limit

(1) V

VFF = 0 V

4.8

5.2

ICOMP

Max. source current

VCOMP = 3.3 V

320

400

480

µA

RCOMP

Dynamic resistance

VCOMP = 2.6 to 4.8 V

Ω

VCOMPBM

Burst-mode threshold

(1)

2.52

2.65

2.78

(1) MODE/SC = open

2.7

2.85

Hys

Burst-mode hysteresis

ICLAMPL

Lower clamp capability

VCOMP = 2 V

-3.5

-1.5

VCOMPOFF Disable threshold

Voltage falling

1.4

VCOMPO

Level for lower UVLO off

threshold (voltage falling)

(3)

2.61

2.75

2.89

(3) MODE/SC = open

3.02

3.15

3.28

VCOMPL

Level for higher UVLO off

threshold (voltage rising)

(3)

2.93.053.2

(3) MODE/SC = open

3.41

3.55

3.69

Table 4.

Electrical characteristics (continued)

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