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L6566B Datasheet(PDF) 33 Page - STMicroelectronics |
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L6566B Datasheet(HTML) 33 Page - STMicroelectronics |
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33 / 51 page ![]() L6566B Application information 33/51 This function is useful to implement a latched overtemperature protection very easily by biasing the pin with a divider from VREF, where the upper resistor is an NTC physically located close to a heating element like the MOSFET, or the transformer. The DIS pin is a high impedance input, thus it is prone to pick up noise, which might give origin to undesired latch-off of the device. It is possible to bypass the pin to ground with a small film capacitor (e.g. 1-10 nF) to prevent any malfunctioning of this kind. Figure 20. Operation after latched disable activation: timing diagram 5.10 Soft-start and delayed latched shutdown upon overcurrent At device start-up, a capacitor (CSS) connected between the SS pin (14) and ground is charged by an internal current generator, ISS1, from zero up to about 2 V where it is clamped. During this ramp, the overcurrent setpoint progressively rises from zero to the value imposed by the voltage on the VFF pin (15, see Section 5.6: PWM comparator, PWM latch and voltage feedforward blocks on page 27 ); MOSFET’s conduction time increases gradually, hence controlling the start-up inrush current. The time needed for the overcurrent setpoint to reach its steady state value, referred to as soft-start time, is approximately: Equation 12 During the ramp (i.e. until VSS = 2 V) all the functions that monitor the voltage on pin COMP are disabled. Vcc (pin 5) GD (pin 4) Vin VccON VccON -0.5 t t t t 4.5V VccOFF DIS (pin 8) Vccrestart VHVstart HV generator is turned on HV generator turn-on is disabled here Input source is removed here t AC_OK (pin 16) Vth Disable latch is reset here Restart is quicker ⎟⎟ ⎠ ⎞ ⎜⎜ ⎝ ⎛ − = = 3 V 1 I Css ) V ( V I Css T VFF 1 SS VFF csx 1 SS SS |
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