IRF630MFP datasheet(3/14 Pages) STMICROELECTRONICS

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IRF630M - IRF630MFP

Electrical ratings

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Electrical ratings

Table 1.

Absolute maximum rating

Symbol

Parameter

Value

Unit

IRF630M

IRF630MFP

VDS

Drain-source Voltage (VGS = 0)

200

VDGR

Drain-gate voltage (RGS = 20 kW)

200

VGS

Gate- source voltage

± 20

Drain current (continuos) at TC = 25°C

9 (1)

Limited only by maximum temperature allowed

Drain current (continuos) at TC = 100°C

5.7

5.7 (1)

IDM

(2)

Pulse width limited by safe operating area

Drain current (pulsed)

PTOT

Total dissipation at TC = 25°C

Derating factor

0.6

0.24

W/°C

dv/dt (3)

ISD ≤9A, di/dt £300A/µs, VDD £ V(BR)DSS, Tj ≤TJMAX.

Peak diode recovery voltage slope

V/ns

VISO

Insulation winthstand voltage (DC)

2500

Tstg

Storage temperature

–65 to 150

°C

Max. operating junction temperature

150

°C

Table 2.

Thermal data

TO-220

TO-220FP

Rthj-case

Thermal resistance junction-case max

1.67

4.17

°C/W

Rthj-amb

Thermal resistance junction-ambient max

62.5

°C/W

Maximum lead temperature for soldering

purpose

300

°C

Table 3.

Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not-repetitive

(pulse width limited by Tj Max)

EAS

Single pulse avalanche energy

(starting Tj=25°C, Id=Iar, Vdd=50V)

350

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