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IRF630MFP Datasheet(PDF) 5 Page - STMicroelectronics |
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IRF630MFP Datasheet(HTML) 5 Page - STMicroelectronics |
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5 / 14 page ![]() IRF630M - IRF630MFP Electrical characteristics 5/14 Table 6. Sourse drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD ISDM (1) 1. Pulse width limited by safe operating area. Source-drain current Source-drain current (pulsed) 9 36 A A VSD (2) 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Forward on voltage ISD = 9A, VGS = 0 1.5 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 9A, di/dt = 100A/µs VDD = 50V, Tj = 150°C 170 0.95 11 ns nC A |
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