MRF284 datasheet(1/12 Pages) FREESCALE

Part #	MRF284

Description	RF Power Field Effect Transistors

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Manufacturer	FREESCALE [Freescale Semiconductor, Inc]

Direct Link	http://www.freescale.com

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MRF284LR1 MRF284LSR1

1

RF Device Data

Freescale Semiconductor

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for PCN and PCS base station applications with frequencies from

1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier

applications. To be used in Class A and Class AB for PCN-PCS/cellular radio

and wireless local loop.

• Specified Two-Tone Performance @ 2000 MHz, 26 Volts

Output Power = 30 Watts PEP

Power Gain = 9 dB

Efficiency = 30%

Intermodulation Distortion = -29 dBc

• Typical Single-Tone Performance at 2000 MHz, 26 Volts

Output Power = 30 Watts CW

Power Gain = 9.5 dB

Efficiency = 45%

• Capable of Handling 10:1 VSWR, @ 26 Vdc, 2000 MHz, 30 Watts CW

Output Power

Features

• Excellent Thermal Stability

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal.

• RoHS Compliant

• In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain-Source Voltage

VDSS

-0.5, +65

Vdc

Gate-Source Voltage

VGS

±20

Vdc

Total Device Dissipation @ TC = 25°C

Derate above 25°C

PD

87.5

0.5

W

W/°C

Storage Temperature Range

Tstg

- 65 to +150

°C

Case Operating Temperature

TC

150

°C

Operating Junction Temperature

TJ

200

°C

Table 2. Thermal Characteristics

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

RθJC

2.0

°C/W

Table 3. Electrical Characteristics (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

(VGS = 0, ID = 10 μAdc)

V(BR)DSS

65

—

Vdc

Zero Gate Voltage Drain Current

(VDS = 20 Vdc, VGS = 0)

IDSS

—

1.0

μAdc

Gate-Source Leakage Current

(VGS = 20 Vdc, VDS = 0)

IGSS

—

10

μAdc

(continued)

NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

Document Number: MRF284

Rev. 17, 5/2006

Freescale Semiconductor

Technical Data

MRF284LR1

MRF284LSR1

2000 MHz, 30 W, 26 V

LATERAL N-CHANNEL

BROADBAND

RF POWER MOSFETs

CASE 360B-05, STYLE 1

NI-360

MRF284LR1

CASE 360C-05, STYLE 1

NI-360S

MRF284LSR1

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