STP8NM60 datasheet(3/18 Pages) STMICROELECTRONICS

Part #	STP8NM60

Description	N-channel 650 V@Tjmax, 0.9 Ω, 8 A MDmesh??Power MOSFET TO-220, TO-220FP, D2PAK, DPAK, IPAK

PDF	18 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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3 / 18 page

STP8NM60, STD5NM60, STB8NM60

Electrical characteristics

3/18

Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Table 4.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 250 µA, VGS= 0

600

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = max rating,

VDS = max rating @125 °C

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ±20 V

100

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

RDS(on)

Static drain-source on

resistance

VGS= 10 V, ID= 2.5 A

0.9

Ω

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

gfs

Forward transconductance

VDS = ID(on) x RDS(on)max,

ID = 2.5 A

2.4

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 25 V, f=1 MHz,

VGS=0

400

100

Coss eq

(1)

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS

Equivalent output

capacitance

VGS=0, VDS =0 to 480 V

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD= 400 V, ID = 5 A

VGS =10 V

(see Figure 12)

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