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STP8NM60 Datasheet(PDF) 4 Page - STMicroelectronics

Part # STP8NM60
Description  N-channel 650 V@Tjmax, 0.9 Ω, 8 A MDmesh??Power MOSFET TO-220, TO-220FP, D2PAK, DPAK, IPAK
PDF  18 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP8NM60 Datasheet(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STP8NM60, STD5NM60, STB8NM60
4/18
Table 6.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD= 300 V, ID= 2.5 A,
RG= 4.7 Ω, VGS=10 V
(see Figure 17)
14
10
23
10
ns
ns
ns
ns
tr(Voff)
tf
tc
Off-voltage rise time
Fall time
Cross-over time
VDD= 480 V, ID= 5 A,
RG= 4.7 Ω, VGS=10 V
7
10
17
ns
ns
ns
Table 7.
Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain current
8
A
ISDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current (pulsed)
32
A
VSD
(2)
2.
Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward on voltage
ISD = 5A, VGS=0
1.5
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 5 A, VDD=100 V
di/dt = 100 A/µs,
(see Figure 22)
300
1.95
13
ns
µC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 5 A, VDD = 100 V
di/dt = 100 A/µs,
Tj=150 °C
(see Figure 22)
445
3.00
13.5
ns
µC
A



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