STB12NM50N_08 datasheet(3/19 Pages) STMICROELECTRONICS

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STB12NM50N - STD12NM50N - STI/F12NM50N - STP12NM50N

Electrical ratings

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Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-220 / I²PAK

D²PAK / DPAK

TO-220FP

VDS

Drain-source voltage (VGS = 0)

500

VGS

Gate-source voltage

± 25

Drain current (continuous) at TC = 25 °C

11(1)

Limited only by maximum temperature allowed

Drain current (continuous) at TC=100 °C

6.7

6.7(1)

IDM

(2)

Pulse width limited by safe operating area

Drain current (pulsed)

44 (1)

PTOT

Total dissipation at TC = 25 °C

100

dv/dt(3)

ISD ≤ 11A, di/dt ≤ 400A/µs, VDD =80%V(BR)DSS

Peak diode recovery voltage slope

V/ns

VISO

Insulation withstand voltage (RMS) from all three

leads to external heat sink (t=1 s;TC=25 °C)

2500

Tstg

Storage temperature

-55 to 150

°C

Max. operating junction temperature

150

°C

Table 3.

Thermal data

Symbol

Parameter

Value

Unit

TO-220 I²PAK DPAK D²PAK TO-220FP

Rthj-case

Thermal resistance junction-

case max

1.25

°C/W

Rthj-amb

Thermal resistance junction-amb

max

62.5

°C/W

Rthj-pcb

Thermal resistance junction-pcb

max

°C/W

Maximum lead temperature for

soldering purposes

300

°C

Table 4.

Avalanche characteristics

Symbol

Parameter

Value

Unit

IAS

Avalanche current, repetitive or not-repetitive

(pulse width limited by Tj Max)

EAS

Single pulse avalanche energy

(starting Tj=25°C, Id=Ias, Vdd=50V)

350

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