STB12NM50N_08 datasheet(4/19 Pages) STMICROELECTRONICS

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Electrical characteristics

STB12NM50N - STD12NM50N - STI/F12NM50N - STP12NM50N

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Electrical characteristics

(TCASE=25 °C unless otherwise specified)

Table 5.

On/off states

Symbol

Parameter

Test conditions

Min

Typ.

Max

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 1 mA, VGS= 0

500

dv/dt(1)

Characteristic value at turn off inductive load

Peak diode recovery voltage

slope

VDD=400 V, ID=11 A,

VGS=10 V

V/ns

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = max rating,

VDS = max rating@125 °C

100

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ±20 V

100

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 250 µA

RDS(on)

Static drain-source on

resistance

VGS= 10 V, ID= 5.5 A

0.29

0.38

Ω

Table 6.

Dynamic

Symbol

Parameter

Test conditions

Min

Typ.

Max

Unit

gfs

(1)

Pulsed: pulse duration=300 µs, duty cycle 1.5%

Forward transconductance

VDS =15 V, ID = 5.5 A

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS =50 V, f=1 MHz,

VGS=0

940

100

Coss eq

(2)

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS

Equivalent output

capacitance

VGS=0, VDS =0 to 400 V

130

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD=400 V, ID = 11 A

VGS =10 V

(see Figure 17)

Gate input resistance

f=1 MHz Gate DC Bias=0

test signal level=20 mV

open drain

4.5

Ω

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