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2SB647 Datasheet(PDF) 3 Page - Renesas Technology Corp |
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2SB647 Datasheet(HTML) 3 Page - Renesas Technology Corp |
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3 / 6 page ![]() 2SB647, 2SB647A Rev.2.00 Aug 10, 2005 page 3 of 5 Main Characteristics Maximum Collector Dissipation Curve 1.2 0.8 0.4 0 50 150 100 Ambient Tmperature Ta (°C) Typical Output Characteristics –1.0 –0.8 –0.6 –0.4 –0.2 0 –2 –10 –6 –4 –8 IB = 0 –0.5mA –2 –1 –5 –10 –20 –30 –40 –60 –80 –100 –120 Collector to Emitter Voltage VCE (V) P C = 0.9 W Typical Transfer Characteristics –500 –200 –100 –50 –20 –10 –5 –2 –1 0 –0.2 –0.4 –0.6 –0.8 –1.0 VCE = –5 V Pulse Base to Emitter Voltage VBE (V) DC Current Transfer Ratio vs. Collector Current VCE = –5 V Pulse Ta = 75 °C 600 500 400 300 200 100 0 –1 –3 –30 –300 –10 Collector Current IC (mA) –100 –1,000 25 –25 Saturation Voltage vs. Collector Current Collector Current IC (mA) IC = 10 IB Pulse Ta = –25 °C 75 25 25 –25 Ta = 75 °C VCE(sat) VBE(sat) –1.2 –1.0 –0.8 –0.6 –0.4 –0.2 –0.6 –0.5 –0.4 –0.3 –0.2 –0.1 0 0 –1 –3 –10 –30 –100 –300 –1,000 Gain Bandwidth Product vs. Collector Current VCE = –5 V 240 200 160 120 80 40 0 –10 –30 –100 –300 –1,000 Collector Current IC (mA) |
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