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STPS80L15TV Datasheet(PDF) 2 Page - STMicroelectronics |
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STPS80L15TV Datasheet(HTML) 2 Page - STMicroelectronics |
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2 / 4 page ![]() Symbol Parameter Value Unit Rth (j-c) Junction to case Per diode 1 °C/W Total 0.55 Rth (c) Coupling 0.1 THERMAL RESISTANCES Symbol Parameter Tests conditions Min. Typ. Max. Unit IR * Reverse leakage current Tj = 100 °CVR = 5V 280 mA Tj = 25 °CVR = 12V 11 Tj = 100 °C 0.44 1.1 A VF * Forward voltage drop Tj = 25 °CIF = 40 A 0.43 V Tj = 125 °CIF = 40 A 0.28 0.33 STATIC ELECTRICAL CHARACTERISTICS (per diode) Pulse test : * tp = 380 µs, δ <2 % To evaluate the conduction losses use the following equation : P = 0.19 x IF(AV) + 3.25 10 -3 xIF2(RMS) 0 5 10 15 20 25 30 35 40 45 0 2 4 6 8 10 12 14 PF(av)(W) δ = 0.2 δ = 0.5 δ = 1 δ = 0.05 δ = 0.1 T δ=tp/T tp IF(av) (A) Fig. 1: Average forward power dissipation versus average forward current (per diode). 0 25 50 75 100 125 0 5 10 15 20 25 30 35 40 45 IF(av)(A) Rth(j-a)=5 °C/W Rth(j-a)=Rth(j-c) Tamb( °C) T δ=tp/T tp Fig. 2: Average forward current versus ambient temperature ( δ=1, per diode). STPS80L15TV 2/4 |
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