STPS80L15TV datasheet(3/4 Pages) STMICROELECTRONICS

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1E-3

1E-2

1E-1

1E+0

100

150

200

250

300

350

400

450

500

IM(A)

Tc=50

°C

Tc=75

°C

Tc=110

°C

t(s)

δ=0.5

Fig. 3: Non repetitive surge peak forward current

versus overload duration (maximum values, per

diode).

1E-4

1E-3

1E-2

1E-1

1E+0

0.0

0.2

0.4

0.6

0.8

1.0

tp(s)

Zth(j-c)/Rth(j-c)

Single pulse

δ = 0.5

δ = 0.2

δ = 0.1

Fig. 4: Relative variation of thermal impedance

junction to case versus pulse(per diode).

123

678

9 10 11 12 13 14 15

1E-1

1E+0

1E+1

1E+2

1E+3

IR(mA)

Tj=100

°C

Tj=25

°C

Tj=75

°C

VR(V)

Fig. 5: Reverse leakage current versus reverse

voltage applied (typical values, per diode).

C(nF)

F=1MHz

Tj=25

°C

VR(V)

Fig. 6: Junction capacitance versus reverse

voltage applied (typical values, per diode).

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

1.0

10.0

100.0

200.0

IFM(A)

Tj=100

°C

(typical values)

Tj=25

°C

(Maximum values)

Tj=100

°C

(Maximum values)

VFM(V)

Fig. 7: Forward voltage drop versus forward

current (per diode).

STPS80L15TV

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