STS1DNC45 datasheet(1/8 Pages) STMICROELECTRONICS

Part #	STS1DNC45

Description	DUAL N-CHANNEL 450V - 4.1ohm - 0.4A SO-8 SuperMESH™ POWER MOSFET

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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June 2003

STS1DNC45

DUAL N-CHANNEL 450V - 4.1

Ω -0.4A SO-8

SuperMESH™ POWER MOSFET

(1)ISD ≤ 0.4 A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX.

s

TYPICAL RDS(on) = 4.1Ω

s

STANDARD OUTLINE FOR EASY

AUTOMATED SURFACE MOUNT ASSEMBLY

s

GATE CHARGE MINIMIZED

DESCRIPTION

The SuperMESH™ series is obtained through an

extreme optimization of ST’s well established strip-

based PowerMESH™ layout. In addition to pushing

on-resistance significantly down, special care is tak-

en to ensure a very good dv/dt capability for the

most demanding applications. Such series comple-

ments ST full range of high voltage MOSFETs in-

cluding revolutionary MDmesh™ products.

APPLICATIONS

s

SWITCH MODE LOW POWER SUPPLIES

(SMPS)

s

DC-DC CONVERTERS

s

LOW POWER, LOW COST CFL (COMPACT

FLUORESCENT LAMPS)

s

LOW POWER BATTERY CHARGERS

ABSOLUTE MAXIMUM RATINGS

(q) Pulse width limited by safe operating area

TYPE

VDSS

RDS(on)

ID

STS1DNC45

450 V

< 4.5

Ω

0.4 A

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS =0)

450

V

VDGR

Drain-gate Voltage (RGS =20kΩ)

450

V

VGS

Gate- source Voltage

± 30

V

ID

Drain Current (continuous) at TC = 25°C

Drain Current (continuous) at TC = 100°C

0.40

0.25

A

IDM ( )

Drain Current (pulsed)

1.6

A

PTOT

Total Dissipation at TC = 25°C Dual Operation

Total Dissipation at TC = 25°C Single Operation

1.6

2

W

dv/dt(1)

Peak Diode Recovery voltage slope

3

V/ns

SO-8

INTERNAL SCHEMATIC DIAGRAM

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