STS1DNC45 datasheet(3/8 Pages) STMICROELECTRONICS

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STS1DNC45

ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING ON

SWITCHING OFF

SOURCE DRAIN DIODE

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on Delay Time

VDD =225 V, ID = 0.5 A

RG = 4.7Ω VGS =10 V

(see test circuit, Figure 3)

6.7

Rise Time

Qgs

Qgd

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

VDD =360 V, ID = 1.5 A,

VGS =10 V

1.3

3.2

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

tr(off)

Off-voltage Rise Time

Fall Time

Cross-over Time

VDD = 360 V, ID = 1.5 A

RG =4.7Ω, VGS =10 V

(see test circuit, Figure 5)

8.5

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain Current

0.4

ISDM (2)

Source-drain Current (pulsed)

1.6

VSD (1)

Forward On Voltage

ISD = 0.4 A, VGS =0

1.6

trr

Qrr

IRRM

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

ISD = 0.4 A, di/dt = 100A/µs,

VDD =100 V, Tj =150°C

(see test circuit, Figure 5)

225

530

4.7

Safe Operating Area

Thermal Impedance

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