32C87 datasheet(55/91 Pages) RENESAS

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M32C/87 Group (M32C/87, M32C/87A, M32C/87B)

5. Electrical Characteristics

REJ03B0127-0151 Rev.1.51 Jul 31, 2008

Page 55 of 85

Table 5.10

Flash Memory Electrical Characteristics (VCC1 = 4.5 V to 5.5 V, 3.0 to 3.6 V,

Topr = 0 to 60

°C unless otherwise specified)

NOTE:

1. If erase and program endurance is n times (n = 100), each block can be erased n times. For example, if a 4-

Kbyte block A is erased after programming a word data 2,048 times, each to a different address, this counts as

one erase and program time. Data can not be programmed to the same address more than once without

erasing the block. (rewrite prohibited)

Symbol

Parameter

Measurement Condition

Standard

Unit

Min.

Typ.

Max.

−

Erase and program endurance(1)

100

times

−

Word program time (16 bits) (VCC1 = 5.0 V, Topr = 25

°C)

300

μs

−

Lock bit program time

300

μs

−

Block erase time

(VCC1 = 5.0 V, Topr = 25

°C)

4-Kbyte block

0.3

8-Kbyte block

0.3

32-Kbyte block

0.5

64-Kbyte block

0.8

tps

Wait time to stabilize flash memory circuit

μs

−

Data hold time (Topr = -40 to 85

°C)

years

VCC1 = VCC2 = 5V

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