2SJ181 datasheet(2/8 Pages) RENESAS

2 / 8 page

2SJ181(L), 2SJ181(S)

Rev.2.00 Sep 07, 2005 page 2 of 7

Absolute Maximum Ratings

(Ta = 25

°C)

Item

Symbol

Value

Unit

Drain to source voltage

VDSS

–600

Gate to source voltage

VGSS

±15

Drain current

–0.5

Drain peak current

ID (pulse)

Note 1

–1.0

Body to drain diode reverse drain current

IDR

–0.5

Channel dissipation

Pch

Note 2

Channel temperature

Tch

150

°C

Storage temperature

Tstg

–55 to +150

°C

Notes: 1. PW

≤ 10 µs, duty cycle ≤ 1%

2. Value at Tc = 25

°C

Electrical Characteristics

(Ta = 25

°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Drain to source breakdown voltage

V (BR) DSS

–600

—

ID = –10 mA, VGS = 0

Gate to source breakdown voltage

V (BR) GSS

±15

—

IG =

±100 µA, VDS = 0

Gate to source leak current

IGSS

—

±10

µA

VGS =

±12 V, VDS = 0

Zero gate voltage drain current

IDSS

—

–100

µA

VDS = –500 V, VGS = 0

Gate to source cutoff voltage

VGS (off)

–2.0

—

–4.0

ID = –1 mA, VDS = –10 V

Static drain to source on state resistance

RDS (on)

—

Ω

ID = –0.3 A, VGS = –10 V

Note 3

Forward transfer admittance

|yfs|

0.3

0.45

—

ID = –0.3 A, VDS = –20 V

Note 3

Input capacitance

Ciss

—

220

—

Output capacitance

Coss

—

Reverse transfer capacitance

Crss

—

VDS = –10 V

VGS = 0

f = 1 MHz

Turn-on delay time

td (on)

—

Rise time

—

Turn-off delay time

td (off)

—

Fall time

—

ID = –0.3 A

VGS = –10 V

RL = 100

Ω

Body to drain diode forward voltage

VDF

—

–0.85

—

IF = –0.5 A, VGS = 0

Body to drain diode reverse recovery time

trr

—

230

—

IF = –0.5 A, VGS = 0

diF/dt = 50 A/

µs

Note:

3. Pulse test

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